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CMOS Silicon-on-Sapphire RF Tunable Matching Networks

EURASIP Journal on Wireless Communications and Networking volume 2006, Article number: 086531 (2006) Cite this article

Abstract

This paper describes the design and optimization of an RF tunable network capable of matching highly mismatched loads to 50 at 1.9 GHz. Tuning was achieved using switched capacitors with low-loss, single-transistor switches. Simulations show that the performance of the matching network depends strongly on the switch performances and on the inductor losses. A 0.5m silicon-on-sapphire (SOS) CMOS technology was chosen for network implementation because of the relatively high-quality monolithic inductors achievable in the process. The matching network provides very good matching for inductive loads, and acceptable matching for highly capacitive loads. A 1 dB compression point greater than dBm was obtained for a wide range of load impedances.

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, University of Calgary, Calgary, AB, Canada, T2N 1N4

    Ahmad Chamseddine, James W. Haslett & Michal Okoniewski

  2. TRLabs, Department of Electrical and Computer Engineering, University of Calgary, Calgary, AB, Canada, T2L 2K7

    Ahmad Chamseddine, James W. Haslett & Michal Okoniewski

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  1. Ahmad Chamseddine
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  2. James W. Haslett
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  3. Michal Okoniewski
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Correspondence to Ahmad Chamseddine.

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Open Access This article is distributed under the terms of the Creative Commons Attribution 2.0 International License ( https://creativecommons.org/licenses/by/2.0 ), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Chamseddine, A., Haslett, J.W. & Okoniewski, M. CMOS Silicon-on-Sapphire RF Tunable Matching Networks. J Wireless Com Network 2006, 086531 (2006). https://doi.org/10.1155/WCN/2006/86531

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